| PART |
Description |
Maker |
| HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144
Specialty DRAMs - 256M (8Mx32) 200MHz
Specialty DRAMs - 256M (16Mx16) 200MHz
Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| HYB25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
|
Infineon
|
| HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| AT49BV3218-90TI AT49BV3218-90CI AT49BV3218T-11CI A |
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Wakefield Thermal Solutions, Inc.
|
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM23C32000 |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
